At the low-voltage bias, the plots are linear with a slope of about 1.45 for the different temperature. The crossbar architectures exhibit a second regime

at the voltage higher then 0.45 with slope of about 4.31. Figure 6 Log( I )-log( V ) plot of the I – V characteristics and electronic structure of BPD and crosslinked BPD-Ni SAM. (a) Temperature-dependent d 2 i/d 2 v 3-MA supplier versus BIBW2992 concentration voltage and the log(I)-log(V) plot of the I-V characteristics. (b, c) Electronic structure of the BPD and the crosslinked BPD-Ni SAM as computed from DFT (see the text). The d 2 i/d 2 v shows different peaks located at the near-infrared region [26, 27]. A possible explanation for this observation can be sought in the electronic properties BMS202 in vitro of the crosslinked SAM. Figure 6b,c presents frontier orbitals of the BPD and the crosslinked BPD-Ni structures as obtained from a DFT calculation of the isolated molecules. The highest occupied molecular orbital (HOMO) electronic density distribution shows localization of the electrons on the bipyridine in both cases. It is possible that when an electron proceeds through the valence orbitals (HOMO), it can also be coupled to the single local vibrational mode of the pyridine

at the corresponding voltage bias. It is noteworthy that different molecular electronic studies show that involvement of the valence bond in such phenomena remains unclear [24, 28]. The temperature-dependent d 2 i/d 2 v versus voltage characteristics shows a clear impact of temperature on transport properties. High temperatures favor incoherent transport. However, low temperatures favor the coherent mode (Figure 6a). These Resminostat phenomena are explainable by the impact of electron vibration (phonon) interaction [24, 28]. The high temperature reduces the inelastic scattering length by increasing the phonon population, rendering electron-phonon interaction sufficiently strong to activate the different vibrational mode of the molecular system, which can engender pronounced current. This regime, called incoherent, is usually designated as hopping.

This phenomenon was explained in an earlier report [28], which presented data similar to those from the present study, with junctions fabricated using the electromigration technique. Conclusions This report presents a novel method to produce a molecular electronic crossbar device basing in two strategies to avoid penetration of the metal through the organic film: (i) using the crosslinked self-assembled monolayer of 5,5′-bis (mercaptomethyl)-2,2′-bipyridine-Ni2+ (BPD-Ni2+) on a gold surface and (ii) by reducing the area of the bottom electrodes (100 nm), the probability of the SAM defects is reduced. Temperature-dependent I-V characteristics of devices show thermally activated hopping transport excluding existence of spurious metal filament transport.